TARANTO
JU-ECSEL TARANTO: TowARds Advanced bicmos NanoTechnology platforms for rf and thz applicatiOns
Funding agency: EC (European Commission) Under the JU-ECSEL 2017 Project Id: 737454
Project members/Partners STMICROELECTRONICS S.A., France (Project Coordinator) UNIVERSITE DE MONTPELLIER (France), UNIVERSITE DE BORDEAUX (France), UNIVERSITE DE LILLE (France), XMOD TECHNOLOGIES (Austria), INRAS GMBH (Austria), UNIVERSITAT LINZ, INFINEON TECHNOLOGIES AG, IHP GMBH(Austria) - INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS/LEIBNIZ-INSTITUT FUER INNOVATIVE MIKROELEKTRONIK (Germany), MICRAM MICROELECTRONIC GMBH (Germany), RUHR-UNIVERSITAET BOCHUM (Germany), RHEINISCH-WESTFAELISCHE TECHNISCHE HOCHSCHULE AACHEN (Germany), TECHNISCHE UNIVERSITAET DRESDEN (Germany), UNIVERSITAT DES SAARLANDES (Germany), UNIVERSITAET STUTTGART (Germany), INTEGRATED SYSTEMS DEVELOPMENT S.A. (Greece), POLITECNICO DI MILANO (Italy), UNIVERSITA DEGLI STUDI DI MODENA E REGGIO EMILIA (Italy), UNIVERSITA DEGLI STUDI DI PAVIA (Italy), UNIVERSITA DEGLI STUDI DI ROMA LA SAPIENZA (Italy), INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM (Belgium), DICE DANUBE INTEGRATED CIRCUIT ENGINEERING GMBH & CO KG (Austria), UNIVERSITA DELLA CALABRIA (Italy), SIAE MICROELETTRONICA SPA (Italy), UNIVERSITE GRENOBLE ALPES (France), KARLSRUHER INSTITUT FUER TECHNOLOGIE (Germany), NOKIA SOLUTIONS AND NETWORKS GMBH &CO KG (Germany), BERGISCHE UNIVERSITAET WUPPERTAL (Germany), FRIEDRICH-ALEXANDER-UNIVERSITAET ERLANGEN NUERNBERG (Germany).
Researchers @ UniMORE: Luca Larcher and Paolo Pavan
Start date: 01/04/2017
End date: 31/03/2020
The TARANTO project targets to break the technological barriers to the development of the next BiCMOS technology platforms, allowing the improvement of the performance of the HBT (Heterojunction Bipolar Transistors) with a much higher level of integration. This new generation of transistors HBT will be a key factor to meet the needs of high-speed communications systems and high data rate required for the integration of heterogeneous intelligent systems as well as for intelligent mobility systems that will be used in future fully automated transport systems. The main objectives of this project will be to develop transistors HBT offering high maximum frequency (Fmax: 600GHz) built to very high density CMOS processes: 130 / 90nm for IFX, 55 / 28nm to ST, while IHP will work on the project to achieve maximum frequencies of 700GHz remaining compatible with IFX and ST BiCMOS processes.
The project consortium gathers the main European players in the value chain for these applications at very high frequencies, from laboratories to industrial users, thus ensuring the highest scientific level and the ability to validate the work carried out on appropriate demonstrators.