You are here: Home » People » Francesco Maria Puglisi



Francesco Maria Puglisi was born in Cosenza, Italy, in 1987. He received his M.Sc. degree in Microelectronic Engineering at the University of Calabria, Italy, in 2010. He discussed a thesis, developed at imec, Belgium, on the measurement and optimization of carriers lifetime in industrial silicon solar cells. In 2012 he started his Ph.D. program at the University of Modena and Reggio Emilia studying the principles of operation and the reliability issues of Resistive Memories, focusing on physics-based compact modeling and Random Telegraph Noise analysis. He was a visiting Ph.D. student at SEMATECH, U.S.A., in 2013 and received his Ph.D. degree in 2015 with full marks. He is the recipient of two Best Paper Awards at prestigious international conferences (IEEE ICICDT 2013 and IEEE ESSDERC 2016) for his contributions on Resistive Memories compact modeling and Random Telegraph Noise in FinFETs. He also received a number of national recognitions for his student record and scientific contributions.

He has authored and co-authored many technical and invited papers on international journals and conferences, and a chapter of an edited book.

He is currently Associate Professor of Electronics at the University of Modena and Reggio Emilia, Italy.

Research Interests

His research interests are in the characterization and physics-based/compact modeling of Resistive Memories for non-volatile memory, neuromorphic, and security applications. He focuses on novel characterization techniques, particularly noise analysis, and reliability of advanced devices like Resistive Memories, FinFETs, novel MOSFETs architectures. He is also interested in 2D materials for logic and memory applications, memory-in-logic devices and circuits for novel non-Von-Neumann computation schemes, and in the characterization and modeling/simulation of novel III-V devices for power and logic applications, and in advanced heterostructure bipolar transistors for high-speed communications.


He has authored and co-authored >40 papers published in refereed international journals and international conference proceedings, and 1 book chapter in an edited book.


During his research activity, he has collaborated with a number of scientific and industrial institutions including: SEMATECH, Albany, N.Y. (U.S.A.); CEA-Leti, Grenoble (France); IBM Zurich (Switzerland); imec (Belgium); Soochow University (China), Singapore University of Technology and Design (Singapore), ihp Microelectronics GmbH (Germany), Institut Matériaux Microélectronique Nanosciences de Provence (France).

Conference Program Committees

He has served as a TPC (Technical Program Committee) member for the following International Conferences: IEEE IRPS 2017 and 2018 in the “Dielectrics” committee; IEEE IPFA 2018 in the "Device Reliability" committee; IEEE ESREF 2018 in the "Si-Technologies & Nanoelectronics: Hot carriers, high-k, gate materials" committee; MicDAT 2018; IEEE IIRW 2017 and 2018. He served in the management committee of IEEE IIRW 2018 as "European Liaison" and in the organization committee of ChinaRRAM 2017. He also serves as a reviewer for several prestigious technical journals including but not limited to Nature Communications, Nature Scientific Reports, IEEE Journal of Electron Device Society, IEEE Transactions on Device and Materials and Reliability, and is a golden reviewer for IEEE Transactions on Electron Devices and IEEE Electron Device Letters.