Università degli studi di Modena e Reggio Emilia

GIOVANNI VERZELLESI - HOME PAGE

GIOVANNI VERZELLESI Professor of Electronics    Università di Modena e Reggio Emilia  Dipartimento di Scienze e Metodi dell'Ingegneria  Via Amendola 2 - Pad. Morselli  42122 Reggio Emilia - Italy  tel: +39 0522 522605  fax: +39 0522 522609  email: giovanni.verzellesi@unimore.it

      

Biography

Giovanni Verzellesi was born in Reggio Emilia, Italy, in 1964. He received the "Laurea" degree (summa cum laude) in Electrical Engineering from the University of Bologna, Italy, in 1989, and the Ph.D. degree also in Electrical Engineering from the University of Padova, Italy, in 1994. In 1993-94 he was a visiting graduate student at the University of California, Santa Barbara. From 1994 to 1999, he was with the Department of Materials Engineering, University of Trento, Italy, as a Research Associate. In 1999 he joined the Department of Information Engineering, University of Modena and Reggio Emilia, Italy, where he became Associate Professor in 2000 and full Professor of Electronics in 2006. Since 2008 he has been with the Department of Sciences and Methods for Engineering (DISMI), University of Modena and Reggio Emilia. In 2008 he was elevated to the grade of Senior Member of the Institute of Electrical and Electronics Engineers (IEEE). He is an Editor of the IEEE Transactions on Electron Devices for the Compound Semiconductor Devices section.

Research Interests

• GaN-based field-effect transistors for power RF and power switching applications: device simulation, modelling/optimization, experimental characterization, reliability.
• InGaN/GaN blu light-emitting diodes: device simulation, experimental characterization.
• InGaAs MOSFETs for post-11-nm CMOS technology nodes: device simulation, modelling/optimization, statistical variability.
• Si radiation detectors: device simulation, modelling/optimization.

Past research topics: GaAs-based field-effect transistors for RF applications, Si- and SiC-based radiation detectors (X-ray, nuclear radiation), Si-based optical and chemical sensors, impact-ionization effects and measurement/modelling of parasitic resistances in Si bipolar transistors. 

Publications

He has co-authored >100 papers in refereed international journals (including >40 papers in IEEE journals), >110 papers in proceedings of international conferences, 3 book chapters. 

See http://scholar.google.it/citations?hl=en&user=VqyA9LgAAAAJ for updated list of publications, citations and h-index.          

Technical Committees

• Editor (Compound Semiconductor Devices), IEEE Transactions on Electron Devices, since Sept. 2017.
• Senior Member, IEEE, since 2008.

• Technical Program Committee Member: IEEE Electron Devices Meeting (IEDM), 2004-2005; IEEE International Reliability Physics Symposium (IRPS), 2010-2011; European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), 2010-today; European Solid-State Device Conference (ESSDERC), 2014; Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (EXMATEC), 2012; PRIME-Conference on Ph.D. Research in Microelectronics & Electronics, 2011.
• Publications Co-Chair, European Solid-State Device Conference (ESSDERC), 2014.
• General Co-Chair, European Workshop on Heterostructure Technology (HETECH), 2008.
• Steering Committee Member, European Workshop on Heterostructure Technology (HETECH), 2003-2013.